Toshiba Expands GaN HEMT Product Family with Power Amplifiers for C- & Ku-Band SATCOM & X-BAND Industrial Applicaton
Toshiba America Electronic Components, Inc., and its parent company, Toshiba Corp., announced the addition of three new gallium nitride (GaN) semiconductor High Electron Mobility Transistors (HEMTs) to its power amplifier product family, at the 2009 IEEE MTT-S International Microwave Symposium.
Toshiba's first commercial C-band GaN HEMT for satellite communication applications, the TGI 7785-120L, operates in the 7.7 GHz1 to 8.5 GHz range with output power of 120W. The device features output power of 51.0dBm (typ.) with 44dBm input power, linear gain of 11.0dB2 (typ.) and drain current of 10.0 Amps2 (typ.). This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for SATCOM applications.
"We believe this is the highest output power internally matched GaN HEMT in this band that is commercially available," said Homayoun Ghani, business development manager, Microwave, RF and Small Signal Devices, in TAEC's Discrete Business Unit. "Its 120W output power is nowhere near the limit of GaN technology, as we expect to be able to double or even quadruple this output power in the future."
Toshiba is also unveiling another GaN HEMT for satellite communication applications, the extended Ku-Band TGI1314-50L, which operates in the 13.75GHz to 14.5GHz range with output power of 50W. The device features output power of 47.0dBm (typ.) with 42dBm input power, linear gain of 8.0dB (typ.) and drain current of 5.0 Amps (typ.). Targeted applications are SATCOM applications such as high power solid-state power amplifiers (SSPA) and block up converters (BUC) for very small aperture terminals (VSAT).
Toshiba's X-Band TGI1011-50-771 operates in the 11.3 GHz to 11.5 GHz range with output power of 50W. It features output power of 47.0dBm (typ.)2 with 41dBm input power, linear gain of 9.0dB2 (typ.) and drain current of 5.0 Amps2 (typ.). Targeted industrial applications include exciters for particle accelerators.
"Toshiba's first commercial GaN power amplifier has been in volume production since 2008 and this technology presents superior device performance such as high gain and efficiency in SATCOM and RADAR market. Toshiba is exploring new markets for this technology. Exciters for particle accelerators are a good example of non-telecommunication and non-radiolocation applications for these power amplifiers," said Ghani. "Toshiba will continue its efforts to develop a dditional GaN devices in other bands with higher output power."
In 2008 , Toshiba announced the Ku-band TGI1414-50L in its GaN power amplifier family, which operates in the 14.0 GHz to 14.5 GHz range for satellite communication applications. It is now in mass production.
Pricing and Availability
Samples of the TGI7785-120L are available now, with mass production scheduled for third quarter, 2009. Sample of the TGI1314-50L and TGI1011-50-771 will be available now. For pricing, please contact your Toshiba representative.