Infineon's OptiMOS 3 75V MOSFET Family with Ideal Characteristics for Energy Efficient Power Conversion Applications
At the China Power Show in Shenzhen, Infineon Technologies announced production availability of its OptiMOS 3 75V power MOSFET family. The new devices feature industry leading on-state resistance [R DS(on)] and Figure of Merit (FOM) characteristics that enable reduced power losses and improved overall efficiency under all load conditions for Switched-Mode Power Supplies (SMPS), as well as power applications like motor control and fast switching Class D amplifiers.
The OptiMOS 3 75V power MOSFET family is ideal for synchronous rectification in AC/DC Switched-Mode Power Supplies, such as those used in desktop computers and computer servers manufactured for global markets. New energy efficiency targets, such as the 80PLUS Gold requirement promoted by Climate Savers Computing Initiative, call for approximately a 10 percent improvement in the energy efficiency of computers compared to the current requirements of the U.S. Energy Star program. With OptiMOS 3 75V, Infineon helps to meet these specifications. The OptiMOS 3 75V device in a space-saving SuperSO8 package features 40 percent lower R DS(on) and 34 percent lower FOM than alternative devices, which translates to a reduction of power losses up to 10 percent in the synchronous rectification stage of the SMPS.
”At Infineon, providing customers with solutions to improve energy efficiency has been a central pillar of the company’s strategy for many years, and today we are recognized as the leading supplier of power semiconductor devices worldwide,” said Andreas Urschitz, Vice President and General Manager, Industrial and Multimarket Division at Infineon Technologies. ”Through a combination of technical leadership, proven high product quality, supply stability and customer support, we are proud to have consistently achieved best supplier status with leading OEM and ODM customers.”
With this new addition to the company’s portfolio of power MOSFETs, there are now nearly 100 devices based on the Infineon N-channel OptiMOS 3 process technology available, each providing best-in-class RDS(on), outstanding low gate charge and therefore lowest power losses. For example, the OptiMOS 3 80V family already offers industry benchmark specifications for power supply synchronous rectification. The new OptiMOS 3 75V power MOSFET family reduces power losses by 10 percent compared to the 80V family, which enables customers to meet even more demanding efficiency requirements.
Characteristics such as the lowest temperature coefficient for R DS(on) [<0.7%/°K] results in very low conduction losses at elevated temperatures. The reduced power losses allow system cost improvement by reducing the need for device paralleling and allowing smaller heatsinks.
Infineon OptiMOS 3 75V power MOSFETs also contribute to supplier goals of providing more compact power supply designs. For example, the OptiMOS 3 75V device in SuperSO8 package can be used to replace an equivalent density D²PAK device. This reduces board space by 60 percent, lowers vertical height by 77 percent (from 4.44 mm to 1 mm) and reduces package width by nearly half (from 10.1 mm to 5.15 mm). In another example, the company offers with 2.0 mΩ typical R DS(on) in TO-220 package a high density OptiMOS 3 75V power MOSFET that can replace two alternative devices.
The OptiMOS 3 75V device in a SuperSO8 package with a RDS(on),max of 4.2 mΩ is priced at US $0.70 per piece (10k pieces quantity). Devices are also available in TO-220, TO-262 and D²PAK packages, with pricing from US $0.65 for RDS(on) class of 5 mΩ, US $0.90 for RDS(on) class of 3 mΩ and US $1.70 for RDS(on) class of 2 mΩ for 10k pieces quantity.