Infineon High Power LDMOS Transistor for Next Generation Cellular Base Stations
At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG introduced a family of high-power LDMOS transistors for design of broadband wireless network base stations. With industry leading power levels up to 300W and video bandwidth exceeding 90 MHz, the new transistors fully support the high peak to average power ratios and high data rate specifications required for the evolution from 3G to 4G wireless networks.
The new transistor family achieves higher gain and higher power density than alternative devices operating in the 1.4 – 2.6 GHz cellular bands. This allows the use of packages with a 30 percent smaller footprint to enable smaller and lower cost amplifier designs. High peak power is valuable for Doherty-based amplifier designs, as well as reduction of parts count in other architectures.
“Reducing power amplifier size while delivering excellent power efficiency translates to smaller base stations, which in turn allows manufacturers to offer efficient and green system solutions at an optimized cost,” said Helmut Vogler, Vice President and General Manager for RF Power, Infineon Technologies AG. “With production release of the initial family of transistors completed, base station providers can turn to Infineon today to meet customer requirements for 4G technology roll-outs beginning in 2010.”
Illustrative performance of the new transistors, in a two-carrier WCDMA signal at 2170 MHz, 30V, 8 dB PAR and 3.84 MHz channel bandwidth is 50W average power, 18 dB gain and 28 percent efficiency (using a transistor with P-1dB output power of 230W). A 300W (P-1dB) device in the same application measures 65W average power, 18 dB gain and 28 percent efficiency.
All of the new PTFB family transistors are offered in open-cavity ceramic packages, for bolt-down or earless mounting. They are Pb-free and ROHS compliant. Samples of the first six products are available now.