IBM Alliance: 28-nm Processor Development
IBM joint Development Alliance of 28-nm semiconductor technology aimed at mobile and consumer electronics applications. The Alliance includes Chartered Semiconductor Manufacturing, Global Foundries, Infineon Technologies, STMicroelectronics and Samsung Electronics, announced that it would start making chips using low power 28nm fabrication process with HKMG (high-K metal gate) dielectrics in the second half of 2010.
This announcement represents an extension of existing joint development agreements, and further progression in the technology offerings of the alliance partners, building on the success of earlier joint development work in 32nm HKMG technology.
The low-power, 28-nm technology will result in processors that offer longer battery life and higher performance than their 32-nm predecessors, all of which is important to the raft of mobile devices—including the growing MID (mobile Internet device) market.
The high-k metal gate technology helps drive the reduction in size and improvements in energy efficiency, according to alliance members. The result is microchip designs with improved performance, reduced feature sizes and low standby power, all of which are important to the newest mobile computing devices.
Gary Patton,VP IBM's Semiconductor R&D Center, said tat IBM and its alliance partners are helping to accelerate development of next-generation technology to achieve high-performance, energy efficient chips at the 28-nm process level through this collaboration.
A 28nm low-power technology evaluation kit was previously made available in December 2008 to early access clients, followed by release in March 2009 of an evaluation kit for open access to the general marketplace. Early risk production is anticipated in the second half of 2010.