Hynix annonunces World's First High Speed Mobile 1GB DDR2 DRAM
Hynix Semiconductor, a leading provider of flash-based memory products, announced that it has developed the world's first mobile 1GB DDR2 DRAM using the company's new 54nm process technology. By successfully developing a 50nm-class process, Hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.
According to the specifications. this device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, boasts bandwidth of 4.26 Gbps on a single channel device and 8.52 Gbps on a dual channel. Hynix's 'One Chip Solution' design, offers the customer flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip. Additionally, Hynix's new mobile DDR2 is an eco-friendly device since it consumes only 50 percent of power compared to the previous generation mobile DDR, and 30 percent compared to standard DDR2 DRAM.
The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life. The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.
Hynix plans to start mass production of this product in the second half of this year to satisfy the increasing demand for high performance mobile applications.